Ultragan_publi

F. Medjdoub, J.-F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, E. Kohn “Promising AlInN/GaN HEMT structures for high power performance” IEEE EDS Workshop on Advanced Electron Devices, Duisburg (Germany), 2006

F. Medjdoub, J.-F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, E. Kohn “Novel AlInN/GaN HEMT structures for high power performance” 30th WOCSDICE, Fiskebäckskil, Sweden, 2006

F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn “Above 2 A/mm drain current density of GaN HEMTs grown on Sapphire” IEEE Lester Eastman Conference on High Performance Devices, Ithaca (USA), 2006
International Journal of High Speed Electronics and Systems, IJHSES, Vol. 17, No. 1, pp. 91-95, 2007

F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn “Impact of Field Plate technology on the Schottky diode characteristic of InAlN/GaN HEMTs” 15th European Workshop on Heterostructure Technology, 2006, Manchester (UK)

F. Medjdoub, D. Duccatteau, C. Gaquière, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn “Surface capping of AlInN/GaN HEMT structures” European Workshop on III-Nitride semiconductor Material and devices, 2006, Crete (Greece)

J. Kuzmik, S. Bychikhin, E. Pichonnat, C. Gaquiere, E. Morvan, D. Pogany, “Influence of surface trapping on determination of electron saturation velocity in AlGaN/GaN structure”, ”, International Conference on the Physics on Semiconductor July 24-28 2006, Vienna, Austria.

K. Cico, J. Kuzmík, D. Gregušová, T. Lalinský, D. Pogany , K. Fröhlich, „Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures”, The 14th Workshop on Dielectrics in Microelectronics (WoDim), June 26-28, 2006, Santa Tecla, Italy

J. Kuzmik, (invited), J.-F. Carlin, T. Kostopoulos, G. Konstantinidis, S. Bychikhin, A. Georgakilas, D. Pogany:” InAlN/(In)GaN HEMTs for high power applications (Ultragan project)”, MIKON 2006, Workshop on GaN Devices, May 25 2006, Krakow Poland.

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Poisson, B. Grimbert, C. Gaquière, “Temperature analysis of AlGaN/GaN High-Electron- Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping”, European Microwave Integrated Circuits Conference, September 2006, Manchester UK, accepted for oral presentation

J. Kuzmik, S. Bychikhin, D. Pogany, Electrical and thermal transient effects in GaN-based HEMT devices; European Workshop on III-Nitride Semiconductor Materials and Devices, September 18-20, 2006, Anissaras Hersonissos, Heraklion, Crete, Greece, accepted for invited talk

J. Kuzmik, S. Bychikhin, R. Lossy, H.-J. Würfl, M-A. di Forte Poisson, J.-P. Teyssier, C. Gaquière, D. Pogany: “Investigation of the cooling effect introduced by the airbridge structure in the multifinger AlGaN/GaN HEMTs”, WOCSDICE 2006, May 14-17, Fiskebäckskil Sweden, pp.181-183.

J. Kuzmik, S. Bychikhin, D. Pogany, Status and prospects in InAlN/(In)GaN HEMTs and nanosecond thermal analysis of III-Nitride devices, accepted on TARGET tutorial on European microwave week, 14 September 2006, Manchester UK

J. Kuzmik, S. Bychikhin, R. Lossy, H-J. Würfl, M-A DiForte Poisson, J-P Teyssier, C. Gaquiere, E. Kohn, D. Pogany, “Thermal boundary resistance between GaN layer and different substrates determined by transient electrical and optical methods”, International Conference on the Physics on Semiconductor, July 24-28 2006, Vienna , Austria., p.306.

F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, M. Knez, D. Troadec, C. Gaquière, A. Chuvilin, U. Kaiser, N. Grandjean and E. Kohn “Barrier layer downscaling of InAlN/GaN HEMTs” Device Research Conference, Indiana (US), DRC Tech. Dig., p. 109, 2007

F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, C. Gaquière and E. Kohn, “Breaking the AlGaN/GaN HEMT scaling limit with AlInN barriers” 31th WOCSDICE, Venise (Italy), 2007

K. Cico, J. Kuzmík, D. Gregušová, T. Lalinský, A. Georgakilas, D. Pogany , K. Fröhlich, „Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures”, The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM ’06, October 16-18, 2006, Smolenice, Slovakia, Conference Proceedings pp. 197-200.

J. Kuzmik, J.-F. Carlin, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, A. Georgakilas, D. Pogany, “Gate-lag and drain-lag effects in InAlN/GaN and GaN/InAlN/GaN HEMTs”, Technical digest International Workshop on Nitride Semiconductors 2006, p. 302, October 22-27, 2006, Kyoto, Japan

G. Pozzovivo, S. Golka, J. Kuzmik, W. Schrenk, J.-F. Carlin, M. Gonschorek, N. Grandjean, M. A. Di Forte-Poisson, S. L. Delage, G. Strasser, and D. Pogany, “Optimization of the plasma etching in fabrication of InAlN/AlN/GaN HEMTs”, proceedings of The 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, Venice, Italy May 20-23, 2007, pp. 245-247, ed. G. Meneghesso

J. Kuzmik, G. Pozzovivo, K. Cico, S. Golka, W. Schrenk, J.-F. Carlin, M. Gonschorek, N. Grandjean, K. Fröhlich , G. Strasser, and D. Pogany, “Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTs”, proceedings of The 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, Venice, Italy May 20-23, 2007, pp. 359-362, ed. G. Meneghesso

UltraGaN Publication (up to September 2007)

UltraGaN participation at Conferences (till September 2007)

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J. Kuzmik, S. Bychikhin, D. Pogany, C. Gaquière, E. Morvan, “Current conduction and saturation mechanism in AlGaN/GaN ungated structures”, Journal of Applied Physics 99, 123720 (2006)

F. Medjdoub, J.-F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, S. Vandenbrouck, C. Gaquière, J.C. Dejaeger and E. Kohn “Small signal characteristics of AlInN/GaN HEMTs” Electronics Letters, Vol. 42, No. 13, pp. 779-780, 2006

F. Medjdoub, D. Ducatteau, C. Gaquière, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, and E. Kohn, “Evaluation of AlInN/GaN HEMTs on Sapphire substrate in the microwave, time and temperature domains” Electronics Letters, Vol. 43, No. 5, pp. 71-72, 2007

F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Duccatteau, C. Gaquière, N. Grandjean, E. Kohn “Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?” Proceedings of the IEEE International Electron Device Meeting (IEDM), 2006, San Francisco (USA)

F. Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M. A. di Forte- Poisson, M. Knez, E. Delos, C. Gaquière, S.L. Delage and E. Kohn, “Characteristics of Al2O3/AlInN/GaN MOSHEMT” Electronics Letters, Vol. 43, No. 12, pp. 691-692, 2007

F. Medjdoub, S. Delage and E. Kohn, “InAlN HEMT fabrication method”. Patent pending (2007)

J. Kuzmík, S. Bychikhin and D. Pogany, C. Gaquière, E. Pichonat, E. Morvan, “Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods”, Journal of Applied Physics 101, 054508 (2007)

J. Kuzmik, J.-F. Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, S. Golka, A. Georgakilas, N. Grandjean, G. Strasser, and D. Pogany, “Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs”, Physica status solidi (a) 204 (2007) p.2019

J. Kuzmík, S. Bychikhin, R. Lossy H.-J. Würfl, M-A. di Forte Poisson, J.-P. Teyssier, C. Gaquière, D. Pogany: “Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges,” Solid-State Electronics 51 (2007) pp. 969-974.

G. Pozzovivo, J. Kuzmik, S. Golka, W. Schrenk, G. Strasser, D. Pogany, K. Cico, M. Tapajna, K. Fröhlich, J.-F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean: “Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors”, Applied Physics Letters 91, 043509 (2007).

K. Cico, J. Kuzmik, D. Gregusova, R. Stoklas, T. Lalinsky, A. Georgakilas, D. Pogany, K. Frohlich: “Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures, Microelectronics Reliability 47 (2007), 790-793.

F. Medjdoub, S. Delage and E. Kohn, “InAlN HEMT fabrication method”. Patent pending (2007)

N. Sarazin, O. Jardel, E. Morvan, R. Aubry, M. Laurent, M. Magis, M. Tordjman, M. Alloui, O. Drisse, M. A. di Forte Poisson, and S.L. Delage, N. Vellas, C. Gaquière, D. Théron, “X-band Power Characterisation of AlInN/AlN/GaN HEMT grown on SiC Substrate”, to be published by Electronics Letters.