Ref No | Country | Participating Company / Organisation | Short name | Partner Profile |
1 | France | Alcatel Thales III-V Lab | AT35Lab | IND |
2 | France | CNRS | IEMN | RES |
3 | Austria | Austria Technische Universität Wien - Institute Für Festkorperelektronik | TUW | HE |
4 | Slovakia | Slovakia Institute of Electrical Engineering Slovak Academy of Sciences | IEE | RES |
5 | Germany | Germany Aixtron AG | AIXTRON | IND |
6 | Switzerland | Switzerland Ecole Polytechnique Fédérale de Lausanne | EPFL | HE |
7 | Greece | Foundation for Research and Technology - HELLAS | FORTH | RES |
8 | Germany | Germany University of Ulm | TUU | HE |
Ref No |
Technique | Hetero-structure | Characterisation (Fat HEMT) | Microwave Processing | Advanced Passivation | Thermal Study |
Electrical Validation | Managemen t & Coordinatio n |
1 | MOCVD | InAlN/GaN SH | ü |
3D-Thermal simulation Thermal metrology Packaging |
ü |
|||
2 | Electrostatic simulation | Breakdown characterisation S-Parameters Load-Pull |
||||||
3 | ü |
Passivation characterisation Lag characterisation | Metrology | Breakdown Characterisation | ||||
4 | Passivation for TUU |
Passivation Study (Si3N4, Al2O3, etc) | ||||||
5 | MOCVD | GaN Buffer for MBE, InAlN/GaN SH |
||||||
6 | MOCVD | InAlN/GaN SH & DH |
ü | |||||
7 | MBE | InAlN/GaN SH & DH |
ü | |||||
8 | Advanced Processing |